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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5439 DESCRIPTION *With TO-220F package *High collector breakdown voltage *Excellent switching times APPLICATIONS *Switching regulator applications *High voltage switching applications *DC-DC converter applications *Inverter lighting applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 1000 450 9 8 16 1 2 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IC=3.2A; IB=0.64 A IC=3.2A; IB=0.64 A VCB=1000V; IE=0 VEB=7V; IC=0 IC=1mA ; VCE=5V IC=1A ; VCE=5V 10 14 MIN 450 1000 2SC5439 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 10 V V A A 34 Switching times ton ts tf Turn-on time Storage time Fall time IB1=0.64A ;IB2=1.28A VCC>200V;RL=62.5@ 0.2 2.0 0.15 3.5 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5439 Fig.2 outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5439 4 |
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